HGTP10N120BN
Manufacturer:
On Semiconductor
Mfr.Part #:
HGTP10N120BN
Datasheet:
Description:
IGBTs TO-220AB-3 Through Hole Single 1.2 kV 298 W 35 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1.2 kV |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Current Rating | 35 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 49.2 W |
| Power Dissipation | 298 W |
| Max Collector Current | 35 A |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Continuous Collector Current | 35 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Max Breakdown Voltage | 300 V |
| Collector Emitter Saturation Voltage | 2.45 V |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 20 V |
Stock: 2
Distributors
pcbx
pcbxUnit Price$5.74013
Ext.Price$5.74013
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $5.74013 | $5.74013 |
| 10 | $4.98019 | $49.80190 |
| 25 | $4.74290 | $118.57250 |
| 50 | $4.51690 | $225.84500 |
| 100 | $4.17178 | $417.17800 |
| 300 | $4.14636 | $1243.90800 |
| 500 | $4.12114 | $2060.57000 |